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  4. Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous silicon
 
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1985
Journal Article
Title

Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous silicon

Author(s)
Pai, C.S.
Lau, S.S.
Sumi, J.
Csepregi, L.
Journal
Applied Physics Letters  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
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