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Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous silicon
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1985
Journal Article
Titel
Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous silicon
Author(s)
Pai, C.S.
Lau, S.S.
Sumi, J.
Csepregi, L.
Zeitschrift
Applied Physics Letters
Language
English
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Fraunhofer-Institut für Siliziumtechnologie ISIT
