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  4. High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
 
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2005
Journal Article
Title

High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode

Other Title
Qualitativ hochwertige GaInAs/AlAsSb Quantenkaskadenlaser mittels Molekularstarhlepitaxie ohne Wachstumsunterbrechung gewachsen
Abstract
Short wavelength (lambda < 5 mu m) quantum cascade lasers are of current interest as they operate in the technologically important atmospheric 3-5 mu m transparency window. For this wavelength range the GaInAs/AlAsSb-on-InP material system offers the advantage of a large conduction band offset of about 1.6 eV over the well-established lattice-matched GaInAs/AlInAs-on-InP material combination with a band offset of only 0.5 eV. In this paper, we report on molecular beam epitaxial growth and subsequent structural and compositional analysis of GaInAs/AlAsSb quantum wells as well as quantum cascade laser structures. Special emphasis has been laid on establishing a growth procedure which allows the growth of these structures without growth interruption at the GaInAs/AlAsSb interfaces. The epitaxial layer sequences were analyzed by high-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy. Finally, mesa waveguide GaInAs/AlAsSb QC lasers were fabricated emitting around 4.5 mu m, which could be operated in pulsed mode up to 400 K.
Author(s)
Manz, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Yang, Quankui
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Maier, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Send, W.
Gerthsen, D.
Journal
Journal of Crystal Growth  
DOI
10.1016/j.jcrysgro.2005.03.059
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • molecular beam epitaxy

  • Molekularstrahlepitaxie

  • antimonide

  • arsenide

  • solid state laser

  • quantum cascade laser

  • Festkörperlaser

  • Quantenkaskadenlaser

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