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  4. ALD ZrO2 processes for BEoL device applications
 
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2014
Conference Paper
Title

ALD ZrO2 processes for BEoL device applications

Abstract
In this paper three different ZrO2 ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and morphology of the films are analyzed on bare Si wafers and the electrical properties such as capacitance, leakage and reliability are investigated on fully integrated BEoL decoupling capacitors. One of the halide ALD processes is identified as the most promising candidate for BEoL capacitor applications.
Author(s)
Weinreich, Wenke  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Seidel, Konrad  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Polakowski, Patrick
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Riedel, Stefan
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Wilde, Lutz
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Sundqvist, Jonas
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Triyoso, Dina H.
Global Foundries
Nolan, Mark G.
Global Foundries
Mainwork
IEEE International Conference on IC Design & Technology, ICICDT 2014  
Conference
International Conference on IC Design & Technology (ICICDT) 2014  
DOI
10.1109/ICICDT.2014.6838604
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Keyword(s)
  • BEoL application

  • MIM capacitors

  • atomic layer deposition

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