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  4. ALD ZrO2 processes for BEoL device applications
 
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2014
Conference Paper
Titel

ALD ZrO2 processes for BEoL device applications

Abstract
In this paper three different ZrO2 ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and morphology of the films are analyzed on bare Si wafers and the electrical properties such as capacitance, leakage and reliability are investigated on fully integrated BEoL decoupling capacitors. One of the halide ALD processes is identified as the most promising candidate for BEoL capacitor applications.
Author(s)
Weinreich, Wenke
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Seidel, Konrad
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Polakowski, Patrick
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Riedel, Stefan
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Wilde, Lutz
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Sundqvist, Jonas
Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Triyoso, Dina H.
Global Foundries
Nolan, Mark G.
Global Foundries
Hauptwerk
IEEE International Conference on IC Design & Technology, ICICDT 2014
Konferenz
International Conference on IC Design & Technology (ICICDT) 2014
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DOI
10.1109/ICICDT.2014.6838604
Language
English
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Fraunhofer-Institut für Photonische Mikrosysteme IPMS
Tags
  • BEoL application

  • MIM capacitors

  • atomic layer deposition

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