• English
  • Deutsch
  • Log In
    Password Login
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Field-induced delocalization and zener breakdown in semiconductor superlattices
 
  • Details
  • Full
Options
2000
Journal Article
Titel

Field-induced delocalization and zener breakdown in semiconductor superlattices

Alternative
Feldinduzierte Delokalisierung und Zenerdurchbruch in Halbleitergittern
Abstract
We investigate the electronic structure in strongly coupled superlattices over a wide field range. It is shown that die Wannier-Stark localization is followed by a field-induced delocalization which is due to a strong Zener coupling to continuum states, We compare different superlattice structures with high and with low barriers to alternatively investigate the affects of. resonant interminiband tunneling and a strong Zener coupling to continuum states. The associated electrical breakdown is quantitatively shown in a detailed analysis of the absorption. A comprehensive theoretical model excellently describes the experimental results. Zener tunneling times are directly addressed by time-resolved experiments.
Author(s)
Rosam, B.
Meinhold, D.
Löser, F.
Lyssenko, V.
Leo, K.
Glutsch, S.
Bechstedt, F.
Köhler, K.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Zeitschrift
Physica status solidi. B
Thumbnail Image
DOI
10.1002/1521-3951(200009)221:1<463::AID-PSSB463>3.0.CO;2-M
Language
English
google-scholar
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • III-V semiconductor

  • III-V Halbleiter

  • superlattice

  • Übergitter

  • optical measurement

  • optische Messung

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022