A unified parameterization of the formation of boron oxygen defects and their electrical activity

The magnitude of light-induced degradation of solar cells based on Czochralski grown silicon strongly depends on material properties. We have performed experiments to describe the activation and recombination activity of boron oxygen defects in boron compensated n-type silicon. Compensated n-type material enables flexible assessment of charge carrier influences on the defect that cannot be distinguished on p-type material. The results can be generalized to p-type material and thus provide valuable insights to the defect. Our measurements demonstrate the two-level defect nature of the slow-formed boron oxygen defect component and allow the study of the dopant dependency of the defect concentrations. Our findings strongly support a revision of the existing model of the defect composition. Based on the experimental results and literature data we have created a parameterization of the lifetime limitation in silicon due to BO defects. Established findings from literature for uncompensated p-type silicon are taken into account and ensure general validity. The parameterization is useful to discuss BO defect influences and can serve to predict material properties after LID.