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  4. Heterogeneous integration of microscale gallium nitride transistors by micro-transfer-printing
 
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2016
Conference Paper
Titel

Heterogeneous integration of microscale gallium nitride transistors by micro-transfer-printing

Abstract
Discrete gallium nitride high electron mobility transistors (HEMTs) are fabricated on <111> oriented silicon, then undercut and assembled onto non-native silicon CMOS wafers by elastomer stamp micro-transfer-printing. The thin, less than 5 um thick, gallium nitride transistors were then electrically interconnected using conventional thin-film metallization processes. Electrical measurements reveal that the heterogeneous integration process is benign to the underlying silicon transistors, and that the heterogeneous wide bandgap GaN transistors maintain their characteristic high voltage performance after being undercut and transferred to the nonnative CMOS wafer.
Author(s)
Lerner, R.
Eisenbrandt, S.
Bonafede, S.
Meitl, M.A.
Fecioru, A.
Trindade, A.J.
Reiner, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Waltereit, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Bower, C.
Hauptwerk
IEEE 66th Electronic Components and Technology Conference, ECTC 2016. Proceedings
Konferenz
Electronic Components and Technology Conference (ECTC) 2016
Thumbnail Image
DOI
10.1109/ECTC.2016.373
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
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