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  4. Blistering during the atomic layer deposition of iridium
 
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2016
Journal Article
Titel

Blistering during the atomic layer deposition of iridium

Abstract
The authors report on the formation of blisters during the atomic layer deposition of iridium using iridium acetylacetonate and oxygen precursors. Films deposited on fused silica substrates led to sparsely distributed large blisters while in the case of silicon with native oxide additional small blisters with a high density was observed. It is found that the formation of blisters is favored by a higher deposition temperature and a larger layer thickness. Postdeposition annealing did not have a significant effect on the formation of blisters. Finally, changing purge duration during the film growth allowed us to avoid blistering and evidenced that impurities released from the film in gas phase were responsible for the formation of blisters.
Author(s)
Genevee, P.
Ahiavi, E.
Janunts, N.
Pertsch, T.
Oliva, M.
Kley, E.-B.
Szeghalmi, A.
Zeitschrift
Journal of vacuum science and technology A. Vacuum, surfaces and films
Funder
Deutsche Forschungsgemeinschaft DFG
Thumbnail Image
DOI
10.1116/1.4934753
Language
English
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Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF
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