Noise characterization of SiGe HBTs up to 170 GHz

This paper presents noise parameter measurements of SiGe HBTs in the 75-170 GHz range. The HBTs with a peak fT of 470 GHz and a peak fmax of 610 GHz were fabricated in a 130nm SiGe BiCMOS process. The measured noise parameters were used to validate the noise model of the compact model HICUM. The analysis shows that the inclusion of the correlation of base and collector current shot noise is essential for an accurate model description of the experimentally determined noise parameters.