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  4. Structural and electrical properties of thin SiO2 layers grown by RTP in a mixture of N2O and O2
 
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1995
Journal Article
Titel

Structural and electrical properties of thin SiO2 layers grown by RTP in a mixture of N2O and O2

Abstract
Ultrathin (less than 10 nm) dielectric films for the application in metal-oxide-semiconductor (MOS) devices have been fabricated in a O2:N2O atmosphere using rapid thermal processing (RTP). It will be shown that with increasing N2O-content in the mixtures of N2O and O2 the oxide thickness decreases and the interfacial nitrogen concentration increases. Therefore, the nitrogen concentration at the Si/SiO2 interface, responsible for improved electrical characteristics, is adjustable by the O2:N2O ratio. High charge-to-breakdown (Q(sub)BD) values comparable to oxides processed in pure N2O atmosphere are obtained for electron injection from the Si-substrate. For electron injection from the gate, the Q(sub)BD-values are considerably higher. For a O2:N2O ratio of 3:1 the highest Q(sub)BD-values have been obtained together with a very homogeneous Q(sub)BD-distribution across the wafer.
Author(s)
Bauer, A.J.
Burte, E.P.
Zeitschrift
Journal of non-crystalline solids
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DOI
10.1016/0022-3093(95)00164-6
Language
English
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Tags
  • MOS

  • ONO

  • RTP

  • SiO2-layer

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