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  4. Nanosized Si3N4/SiC-powders by polysilazane/polycarbosilane-pyrolysis
 
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1994
Conference Paper
Titel

Nanosized Si3N4/SiC-powders by polysilazane/polycarbosilane-pyrolysis

Abstract
The preparation of the nanosized powders has been realized by gasphase-pyrolysis of volatile precursor compounds at temperatures between 600 and 1200 °C. Silicon carbonitride powders have been created from polysilazanes, which have been synthesized by ammonolysis of alkylchlorosilanes. Silicon carbide powders have been prepared from 1,1,3,3-tetramethyl-1,3-disilacyclobutane, gained by the dechlorination- and coupling reaction of chloromethyldimethylchlorosilane with magnesium. The ball-like powder particles have a diameter between 100 and 500 nm and a surface of 10 to 50 m2/g. They are X-ray amorphous and can be crystallized upper 1400 °C to a-Si3N4 and v-SiC respectively.
Author(s)
Boden, Gottfried
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS
Keuthen, M.
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS
Hauptwerk
Silicon Nitride 1993. International Conference on Silicon Nitride-Based Ceramics. Proceedings
Konferenz
International Conference on Silicon Nitride-Based Ceramics 1993
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DOI
10.4028/www.scientific.net/KEM.89-91.107
Language
English
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