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  4. Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices
 
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2000
Journal Article
Titel

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices

Author(s)
Herden, M.
Bauer, A.J.
Ryssel, H.
Zeitschrift
Microelectronics reliability
Thumbnail Image
DOI
10.1016/S0026-2714(99)00264-4
Language
English
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