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Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices
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2000
Journal Article
Titel
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices
Author(s)
Herden, M.
Bauer, A.J.
Ryssel, H.
Zeitschrift
Microelectronics reliability
DOI
10.1016/S0026-2714(99)00264-4
Language
English
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