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  4. Resonant electron tunneling through defects in GaAs tunnel diodes
 
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2008
Journal Article
Title

Resonant electron tunneling through defects in GaAs tunnel diodes

Abstract
Current-voltage characteristics of GaAs tunnel diodes are studied experimentally and theoretically. In theoretical calculations contributions of three different transport mechanisms are considered: direct tunneling processes, nonresonant multiphonon tunneling processes via defects, and resonant tunneling processes through defects. The comparison between theoretical results and experimental data reveals resonant tunneling as the dominant transport mechanism at voltages corresponding to the peak current. At higher voltages this mechanism is replaced by nonresonant tunneling, which is in its turn replaced by over-barrier transport at even larger voltages.
Author(s)
Jandieri, K.
Baranovskii, S.D.
Rubel, O.
Stolz, W.
Gebhard, F.
Guter, Wolfgang
Hermle, Martin  
Bett, Andreas W.  
Journal
Journal of applied physics  
DOI
10.1063/1.3013886
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
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