Publication:
Narrow-band photoreceiver OEIC on InP operating at 38 GHz
Narrow-band photoreceiver OEIC on InP operating at 38 GHz
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Date
1998
Authors
Engel, T.
Strittmatter, A.
Passenberg, W.
Umbach, A.
Schlaak, W.
Droge, E.
Seeger, A.
Steingrüber, R.
Mekonnen, G.C.
Unterborsch, G.
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Abstract
We report on the successful monolithic integration of an InP-based photoreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 mu m, The optoelectronic integrated circuit (OEIC) incorporates two types of high-speed devices, a submicrometer metal-semiconductor-metal photodetector (MSM PD) made of InGaAs-InP and quarter-micrometer high-electron-mobility-transistors (HEMTs) based on a lattice-matched InGaAs-InAlAs-InP layer stack. For this purpose a fabrication process requiring only twelve main steps including a metal-organic chemical vapor deposition growth for the MSM PD layers and a MBE regrowth for the HEMT layers has been developed. At 38 GHz, a responsivity of 3.5 A/W for the OEIC is achieved.
Description
Keywords
HEMT integrated circuits,
iii-v semiconductors,
indium compounds,
integrated optoelectronics,
metal-semiconductor-metal structures,
optical receivers,
photodetectors,
vapour phase epitaxial growth,
narrow-band photoreceiver oeic,
monolithic integration,
optoelectronic integrated circuit,
high-speed devices,
submicron msm photodetector,
metal-semiconductor-metal photodetector,
high-electron-mobility- transistors,
HEMT,
lattice-matched InGaAs-inalas-InP layer stack,
fabrication process,
metal-organic cvd,
chemical vapor deposition,
mbe regrowth,
mocvd growth,
38 GHz,
1.55 micron,
InGaAs-InAlAs-InP,
InGaAs-InP