Narrow-band photoreceiver OEIC on InP operating at 38 GHz

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Engel, T.
Strittmatter, A.
Passenberg, W.
Umbach, A.
Schlaak, W.
Droge, E.
Seeger, A.
Steingrüber, R.
Mekonnen, G.C.
Unterborsch, G.
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We report on the successful monolithic integration of an InP-based photoreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 mu m, The optoelectronic integrated circuit (OEIC) incorporates two types of high-speed devices, a submicrometer metal-semiconductor-metal photodetector (MSM PD) made of InGaAs-InP and quarter-micrometer high-electron-mobility-transistors (HEMTs) based on a lattice-matched InGaAs-InAlAs-InP layer stack. For this purpose a fabrication process requiring only twelve main steps including a metal-organic chemical vapor deposition growth for the MSM PD layers and a MBE regrowth for the HEMT layers has been developed. At 38 GHz, a responsivity of 3.5 A/W for the OEIC is achieved.
HEMT integrated circuits, iii-v semiconductors, indium compounds, integrated optoelectronics, metal-semiconductor-metal structures, optical receivers, photodetectors, vapour phase epitaxial growth, narrow-band photoreceiver oeic, monolithic integration, optoelectronic integrated circuit, high-speed devices, submicron msm photodetector, metal-semiconductor-metal photodetector, high-electron-mobility- transistors, HEMT, lattice-matched InGaAs-inalas-InP layer stack, fabrication process, metal-organic cvd, chemical vapor deposition, mbe regrowth, mocvd growth, 38 GHz, 1.55 micron, InGaAs-InAlAs-InP, InGaAs-InP