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  4. Narrow-band photoreceiver OEIC on InP operating at 38 GHz
 
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1998
Journal Article
Title

Narrow-band photoreceiver OEIC on InP operating at 38 GHz

Abstract
We report on the successful monolithic integration of an InP-based photoreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 mu m, The optoelectronic integrated circuit (OEIC) incorporates two types of high-speed devices, a submicrometer metal-semiconductor-metal photodetector (MSM PD) made of InGaAs-InP and quarter-micrometer high-electron-mobility-transistors (HEMTs) based on a lattice-matched InGaAs-InAlAs-InP layer stack. For this purpose a fabrication process requiring only twelve main steps including a metal-organic chemical vapor deposition growth for the MSM PD layers and a MBE regrowth for the HEMT layers has been developed. At 38 GHz, a responsivity of 3.5 A/W for the OEIC is achieved.
Author(s)
Engel, T.
Strittmatter, A.
Passenberg, W.
Umbach, A.
Schlaak, W.
Droge, E.
Seeger, A.
Steingrüber, R.
Mekonnen, G.C.
Unterborsch, G.
Bach, H.-G.
Bottcher, E.H.
Bimberg, D.
Journal
IEEE Photonics Technology Letters  
DOI
10.1109/68.705622
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • HEMT integrated circuits

  • iii-v semiconductors

  • indium compounds

  • integrated optoelectronics

  • metal-semiconductor-metal structures

  • optical receivers

  • photodetectors

  • vapour phase epitaxial growth

  • narrow-band photoreceiver oeic

  • monolithic integration

  • optoelectronic integrated circuit

  • high-speed devices

  • submicron msm photodetector

  • metal-semiconductor-metal photodetector

  • high-electron-mobility- transistors

  • HEMT

  • lattice-matched InGaAs-inalas-InP layer stack

  • fabrication process

  • metal-organic cvd

  • chemical vapor deposition

  • mbe regrowth

  • mocvd growth

  • 38 GHz

  • 1.55 micron

  • InGaAs-InAlAs-InP

  • InGaAs-InP

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