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  4. Suppression of parasitic substrate modes in Flip-Chip packaged coplanar W-Band amplifier MMICs
 
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2001
Conference Paper
Titel

Suppression of parasitic substrate modes in Flip-Chip packaged coplanar W-Band amplifier MMICs

Alternative
Unterdrückung von parasitären Substratmoden in Flip-Chip aufgebauten, koplanaren W-Band-Verstärkerschaltungen
Abstract
In this work, we describe the impact of different mounting configurations for flip-chip assemblies of W-band millimeter-wave integrated circuits (MMICs). Coplanar 94 GHz amplifiers with high gain have been flip-chip mounted on both, semi-insulating (s. i.) GaAs and n-type doped silicon (n-Si) carriers. The influence of carrier thickness and conductivity on the isolation between the input and output port was investigated to minimize the power leakage into parasitic modes in the flip-chip substrate. The use of lossy n-Si substrates resulted in a significant reduction of feed back and crosstalk effects, and thus an unconditional stable operation of the flip-chip packaged W-band amplifier MMICs was achieved.
Author(s)
Tessmann, A.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Haydl, W.H.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Kerssenbrock, T.V.
Heide, P.
Kudszus, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hauptwerk
IEEE MTT-S International Microwave Symposium Digest 2001. Vol.1
Konferenz
International Microwave Symposium (IMS) 2001
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Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • surface wave

  • Oberflächenwelle

  • parallel-plate mode

  • Parallelplattenmode

  • flip-chip packaging

  • Flip-Chip-Montage

  • MMIC

  • coplanar waveguide

  • koplanarer Wellenleiter

  • W-Band

  • PHEMT

  • GaAs

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