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  4. Characterization of CMOS-devices and circuits build on SIMOX-substrates
 
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1990
Conference Paper
Titel

Characterization of CMOS-devices and circuits build on SIMOX-substrates

Abstract
CMOS devices and circuits have been built in SIMOX subtrates, implanted using a NV 200 high current oxygen implanter. NMOS and PMOS transistors are free from leakage currents showing excellent subthreshold slopes (70 mV/dec for NMOS). The variation of threshold voltage across a 4 inch wafer is less than 30 mV and comparable to bulk silicon devices. The SOI-circuits can be operated at temperatures up to 300 xC.
Author(s)
Belz, J.
Burbach, G.
Pieczynski, J.
Vogt, H.
Hauptwerk
Fourth International Symposium on Silicon-on-insulator technology and devices '90. Proceedings
Konferenz
International Symposium on Silicon-On-Insulator Technology and Devices 1990
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English
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Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS
Tags
  • high-temperature-applications

  • SIMOX-devices-performance

  • SIMOX-substrate-preparation

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