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  4. Near-field evolution in strongly pumped broad area diode lasers
 
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2012
Conference Paper
Titel

Near-field evolution in strongly pumped broad area diode lasers

Abstract
Many applications such as pumping of solid state lasers or ignition of explosives require high optical output powers during a short period. Pulsed operated diode lasers meet these requirements. They can be driven at elevated power levels, well above the ones specified for continuous wave (cw) operation. The optical near-field intensity of a diode laser in this operation regime is a key parameter since it determines the beam properties of the device. High power AlGaAs/GaAs quantum well broad area diode lasers are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser near-fields are monitored on a picosecond time scale using a streak-camera setup during pulse currents of up to ~50 times the threshold current. A transition from gain guiding to thermally-induced index guiding of the near-field is shown. Further power increase is prevented by catastrophic optical damage (COD). This sudden failure mechanism is studied in conjunction with filamentary properties of the near-field. The defect growth dynamics resolved on the picosecond time scale is used to gather inside into the physics behind COD.
Author(s)
Hempel, M.
Tomm, J.W.
Baeumler, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Konstanzer, H.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Mukherjee, J.
Elsässer, T.
Hauptwerk
Novel in-plane semiconductor lasers XI
Konferenz
Conference "Novel In-Plane Semiconductor Lasers" 2012
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DOI
10.1117/12.905945
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • high power broad area diode lasers

  • near-field

  • filamentation

  • degradation

  • catastrophic optical damage

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