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  4. Ion-beam etching, and chemically-assisted ion-beam etching to produce x-ray masks for synchrotron-radiation-lithography
 
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1985
Journal Article
Title

Ion-beam etching, and chemically-assisted ion-beam etching to produce x-ray masks for synchrotron-radiation-lithography

Abstract
Gold patterns for x-ray masks can by obtain through pattern transfer in gold-absorbers by method of Ion-Beam Etching and Chemicall Assisted Ion-Beam Etching. This work presents results of pattern transfer ty soft mask (resist) and hard mask (metal layer) through a three-stage etching process in Au-absorber and a resulting wall inclination of approx. 86 graduation (quasiperpendicular).
Author(s)
Rangelow, J.W.
Journal
Microelectronic engineering  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
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