Ion-beam etching, and chemically-assisted ion-beam etching to produce x-ray masks for synchrotron-radiation-lithography
Abstract
Gold patterns for x-ray masks can by obtain through pattern transfer in gold-absorbers by method of Ion-Beam Etching and Chemicall Assisted Ion-Beam Etching. This work presents results of pattern transfer ty soft mask (resist) and hard mask (metal layer) through a three-stage etching process in Au-absorber and a resulting wall inclination of approx. 86 graduation (quasiperpendicular).
