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  4. Cylindrical indentation to selectively stress nanoscale CMOS transistors
 
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2022
Journal Article
Titel

Cylindrical indentation to selectively stress nanoscale CMOS transistors

Abstract
Advanced indentation techniques have been introduced to study the effects of multiple stresses on the transistor characteristics with using a cylindrical tip with various alignments. Particularly, controlling the cylinder tip orientation relative to the transistor channel direction is proposed to selectively strain the silicon channels in order to induce very different selectively controlled stresses. Several tip alignments allow to shift the stresses from uniaxial towards biaxial stress as well as to induce shear stress. Ring oscillator circuits based on NAND and NOR gates are used to monitor the stress effects on the characteristic circuit frequency as well as on the individual transistors. Finite Element simulations help to identify optimized setup properties for the targeted application. Comparison with previous indentation experiments derives the specific influence of each stress tensor component on the transistor characteristics.
Author(s)
Schlipf, Simon
Fraunhofer-Institut fĂ¼r Keramische Technologien und Systeme IKTS
Clausner, André
Fraunhofer-Institut fĂ¼r Keramische Technologien und Systeme IKTS
Paul, Jens
GlobalFoundries Inc., Dresden
Capecchi, Simone
GlobalFoundries Inc., Dresden
Zschech, Ehrenfried
Fraunhofer-Institut fĂ¼r Keramische Technologien und Systeme IKTS
Zeitschrift
IEEE transactions on device and materials reliability
Thumbnail Image
DOI
10.1109/TDMR.2022.3185930
Language
English
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Fraunhofer-Institut fĂ¼r Keramische Technologien und Systeme IKTS
Tags
  • Chip-package-interaction (CPI)

  • FE simulation

  • Geometry

  • indentation

  • Logic gates

  • MOS devices

  • piezo resistivity

  • reliability testing

  • ring oscillator (RO)

  • Ring Oscillator

  • Silicon

  • Stress

  • Transistors

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