Verfahren zur Herstellung von TiN-Schichten und die mit diesem Verfahren hergestellte Schicht

The process for forming TiN layers on a substrate using CVD in conjunction with N-contg. plasma gases, involves using Ti alcoholate(s) of formula Ti(OR)4 as precursor, where R = alkyl, and working in the remote or downstream region of the plasma. USE - Used as diffusion barriers in very highly integrated circuits. ADVANTAGE - The process gives TiN layers with excellent conformity and gives virtually complete covering of edges.