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Patent
Title

Verfahren zur Herstellung von TiN-Schichten und die mit diesem Verfahren hergestellte Schicht

Other Title
Forming titanium nitride layer on substrate using CVD - by using titanium alcoholate as precursor and nitrogen -contg. plasma gases, giving titanium nitride layers of excellent conformity.
Abstract
The process for forming TiN layers on a substrate using CVD in conjunction with N-contg. plasma gases, involves using Ti alcoholate(s) of formula Ti(OR)4 as precursor, where R = alkyl, and working in the remote or downstream region of the plasma. USE - Used as diffusion barriers in very highly integrated circuits. ADVANTAGE - The process gives TiN layers with excellent conformity and gives virtually complete covering of edges.
Inventor(s)
Weber, A.
Poeckelmann, R.
Klages, C.-P.
Link to Espacenet
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=DE&NR=19506579A
Patent Number
1995-19506579
Publication Date
1996
Language
German
Fraunhofer-Institut für Schicht- und Oberflächentechnik IST  
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