Patent
Title

Halbleiterbauelement mit einer Passivierungsschicht aus hydriertem Aluminiumnitrid sowie Verfahren zur Oberflächenpassivierung von Halbleiterbauelementen

Other Title
SEMI-CONDUCTOR COMPONENT WITH A PASSIVATION LAYER MADE FROM HYDROGENATED ALUMINIUM NITRIDE AND METHOD FOR SURFACE PASSIVATION OF SEMI-CONDUCTOR COMPONENTS
Abstract
The invention relates to a semi-conductor component comprising a base emitter, electric contacts and at least one passivation layer which is made of hydrogenated aluminum nitride or contains essentially said latter. The invention also relates to a corresponding method for the surface passivation of semi-conductor components.
Inventor(s)
Wolke, Winfried  
Wagner, Florian  
Krugel, Georg  
Link to Espacenet
Patent Number
102012016298
Publication Date
2014
Language
German