Halbleiterbauelement mit einer Passivierungsschicht aus hydriertem Aluminiumnitrid sowie Verfahren zur Oberflächenpassivierung von Halbleiterbauelementen

The invention relates to a semi-conductor component comprising a base emitter, electric contacts and at least one passivation layer which is made of hydrogenated aluminum nitride or contains essentially said latter. The invention also relates to a corresponding method for the surface passivation of semi-conductor components.