Verfahren zur trockenchemischen Behandlung von Substraten, sowie dessen Verwendung

Die Erfindung betrifft ein Verfahren zur trockenchemischen Behandlung von Substraten, ausgewaehlt aus der Gruppe, bestehend aus Silicium, Keramik, Glas und Quarzglas, bei dem das Substrat in einer beheizten Reaktionskammer mit einem Chlorwasserstoff als Aetzmittel enthaltenden Gas behandelt wird, sowie ein derart herstellbares Substrat. Ebenso betrifft die Erfindung Verwendungen des zuvor genannten Verfahrens.

DE 102005058713 A1 UPAB: 20070822 NOVELTY - Purifying a silicon, ceramic, glass or quartz glass substrate with an etching gas comprising chlorine or a chlorine compound in a heated reaction chamber comprises selecting the temperature and concentration of the etching gas so that impurities in the bulk of the substrate are at least partially removed. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) texturing a wafer with a texturing gas comprising chlorine or a chlorine compound in a heated reaction chamber; (2) silicon, ceramic, glass or quartz glass substrate purified as above. USE - The process is useful for bulk purification of substrates, especially wafers and ceramics (claimed). A process as above in which a surface layer is also istropically etched and removed is useful for removing surfaces impurities from substrates and removing crystal defects from wafers (claimed). A process as above in which a surface layer is removed and the surface of the substrate is isotropically textured is useful for texturing wafers (claimed) ADVANTAGE - The process is simple.