Verfahren und Vorrichtung zur plasmagestuetzten Behandlung von vorgebbaren Oberflaechenbereichen eines Substrates

Verfahren und Vorrichtung zur plasmagestuetzten Behandlung von vorgebbaren Oberflaechenbereichen eines Substrates (1), bei welchem durch Anlegen einer Spannung an zwei Elektroden (1, 3) eine Gasentladung ohne dielektrische Barriere betrieben wird und ein Isolator (2) zwischen die Elektrode (3) und das Substrat (1) derart eingebracht wird, dass an den vorgegebenen Oberflaechenbereichen Entladungsspalte (4) entstehen, welche durch Aussparungen im Isolator (2) gebildet werden.

DE 10322696 B UPAB: 20050207 NOVELTY - Plasma-assisted treatment of predetermined surface areas of a substrate involves operating a gas discharge without dielectric barriers by applying a potential at 2 electrodes and placing an insulator between one electrode and either the substrate or an ancillary electrode, so that there is a discharge gap at the given area, formed by openings in the insulator and ancillary electrode. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for equipment used for this type of treatment. USE - The process and apparatus are used for plasma-assisted treatment of predetermined surface areas of a substrate (all claimed), including lateral structurization. The treatment can be used on metals, alloys, semiconductor or insulators, especially dielectrics; and for applying coatings. Typical applications include forming protective oxide or nitride coatings on electrode surfaces; oxidation of silicon to form the gate insulator of a metal oxide semiconductor device; structurized etching of silicon with chloro- or fluoro-alkanes; and structurized amination of a polymer surface, e.g. with nitrogen, ammonia and/or hydrazine. ADVANTAGE - Most existing methods for modifying predetermined surface areas use photolithography. Using barrier discharges, with an electrical insulator between the 2 electrodes except over predetermined areas, is simpler, as no additional covering or masking is necessary. However, the plasma does not usually fill the entire cavity, making surface treatment uneven, and the insulator does not allow introduction of gases containing film-forming substances. The present process allows surface modification with lateral structurization, without masking or covering part of the surface. It allows lateral structurization and avoids the above drawbacks.