Verfahren zum Erzeugen mindestens eines Dotierkanals in einer Halbleiterschicht und photovoltaische Solarzelle, umfassend mindestens einen Dotierkanal

The method involves directly or indirectly applying a doping layer at a side of a semiconductor layer (1), where the doping layer contains dopant of an emitter doping type for producing an endowment region. The endowment region is formed as an endowment channel, which extends from the side of the semiconductor layer to an opposite side of the semiconductor layer and/or up to an emitter formed at the latter side. The dopant is inserted into the semiconductor layer by local warming action for producing the endowment region. Independent claims are also included for the following: (1) a method for manufacturing a EWT solar cell (2) a photovoltaic solar cell comprising a semiconductor layer.