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  4. Verfahren zur Herstellung von duennen Schichten aus Zirkoniumdioxid
 
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Title

Verfahren zur Herstellung von duennen Schichten aus Zirkoniumdioxid

Date Issued
1993
Author(s)
Uhlig, H.
Vogel, S.
Kaiser, U.
Patent No
1992-4231779
Abstract
The invention relates to a process for the production of thin films by depositing zirconium dioxide on a substrate, in particular for an optical interference coating system, whereby elementary zirconium is deposited in a vacuum in a vacuum chamber, permitting the ingress of a reactive gas into the vacuum chamber. The invention provides a solution to the problem for a process with which it is possible, without any additional measures such as preparation of the molten metal using oxygen, to produce thin films made of zirconium dioxide having a high refractive index and low absorption. The invention achieves this by using water vapour as the reactive gas and by working at a water vapour pressure of 0.005 to 0.01 Pa and at a vapour deposition rate of less than or equal to 0.7 nm s->-1. The substrate temperature is preferably 300<degrees>Celsius.
Language
de
Institute
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF
Link
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=DE&NR=4231779A
Patenprio
DE 1992-4231779 A: 19920923
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