Laserbasiertes Verfahren und Bearbeitungstisch zur Metallisierung der Rückseite eines Halbleiterbauelements

The invention relates to a method for metallising the back of a semiconductor component, which semiconductor component is part of a photovoltaic cell or a preliminary stage in the production process of a photovoltaic cell, comprising the following method steps: A - applying at least one at least single-layer metal film on the back of the semiconductor component; B - locally heating at least the metal film, such that the metal film fuses momentarily in local areas. It is essential that a hollow is formed at least in regions between the metal film and back of the semiconductor component, which hollow is filled with a filling medium, which filling medium has an optical refractive index of less than 1.4. The invention also relates to a photovoltaic cell which is produced using such a method and a machining table for carrying out such a method.