Verfahren zur Herstellung von Feldeffekt-Transistoren.

A T-shaped gate (5) is first applied lithographically onto the surface of a heterolayer (2) applied onto a substrate (1) in order to simplify the manufacture of III-IV semiconductor field effect transistors. In a following lithographic step, a mask surrounding each transistor element is applied onto the heterolayer (2). The zone of the heterolayer (2) left free by the mask and surrounding the transverse line (5a) of the T-shaped gate (5) and the upper side of the transverse line (5a) of the T-shaped gate (5) are then deposited using a metal vapour deposition jet for generating the source (3) and drain (4) on both sides of the area shadowed by the transverse line (5a). In a third process step, the areas lying between each of the transistor elements (10) are rendered electrically insulating by ion implantation without the use of lithography. As a result of this process, a lithographic step is saved and a complex centering of the gate (5) between the source (3) and the drain (4) is avoide d by the other sequence of the process steps.