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  4. Integrierbarer, kapazitiver Drucksensor und Verfahren zum Herstellen desselben
 
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Title

Integrierbarer, kapazitiver Drucksensor und Verfahren zum Herstellen desselben

Date Issued
1994
Author(s)
Zimmer, G.
Eichholz, J.
Mokwa, W.
Kandler, M.
Manoli, Y.
Patent No
1990-4004179
Abstract
A process for the manufacture of an integratable, capacitive pressure sensor comprises the following process steps starting with a semiconductor substrate: Applying a spacer layer, depositing a polycrystalline semiconductor layer, doping the polycrystalline semiconductor layer and removing the spacer layer by etching. In order to design the pressure sensor compatible for CMOS circuits, a semiconductor area according to the invention is isolated with respect to the semiconductor substrate and an insulator layer is applied to the semiconductor substrate or to the insulated semiconductor area, whereby these process steps are performed prior to applying the spacer layer.
Language
de
Institute
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS
Link
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=DE&NR=4004179A
Patenprio
DE 1990-4004179 A3: 19900212
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