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Patent
Title
Integrierbarer, kapazitiver Drucksensor und Verfahren zum Herstellen desselben
Other Title
Integratable, capacitive pressure sensor and process for manufacturing the same
Abstract
A process for the manufacture of an integratable, capacitive pressure sensor comprises the following process steps starting with a semiconductor substrate: Applying a spacer layer, depositing a polycrystalline semiconductor layer, doping the polycrystalline semiconductor layer and removing the spacer layer by etching. In order to design the pressure sensor compatible for CMOS circuits, a semiconductor area according to the invention is isolated with respect to the semiconductor substrate and an insulator layer is applied to the semiconductor substrate or to the insulated semiconductor area, whereby these process steps are performed prior to applying the spacer layer.
Inventor(s)
Patent Number
1990-4004179
Publication Date
1994
Language
German