Options
Patent
Title
Vorrichtung und Verfahren zur kontinuierlichen Gasphasenabscheidung unter Atmosphaerendruck und deren Verwendung
Other Title
Device for continuous atmospheric pressure gas phase deposition, e.g. of epitaxial silicon layers, has reaction chamber with alternately located gas inlets and outlets on side walls, to minimize parasitic coating
Abstract
Die Erfindung betrifft eine Vorrichtung und ein Verfahren zur kontinuierlichen Gasphasenabscheidung unter Atmosphaerendruck auf Substraten. Die Vorrichtung basiert hierbei auf einer Reaktionskammer, an deren offenen Seiten die Substrate entlanggefuehrt werden, wodurch auf der dem Kammerinneren zugewandten Seite der Substrate die entsprechenden Beschichtungen erfolgen koennen.
;
WO 2007033832 A2 UPAB: 20070517 NOVELTY - In a device for continuous atmospheric pressure gas phase deposition onto substrates, comprising a reaction chamber (1) with two opposite open sides, along which the substrates are transported to close the chamber, and front and back walls (relative to the transport direction) connected by opposite side walls, each side wall has at least two process gas inlets (2) and outlets (3), at least parts of which are alternately located in the transport direction. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a gas phase deposition reactor, comprising a heating furnace in which at least two devices as above are located in parallel or in series; and (2) a deposition method using the apparatus, in which the gas supply is controlled so that, during deposition on the substrate, parasitic deposits on the apparatus are inhibited and/or removed. USE - The substrates to be coated are specifically of silicon, ceramic or glass (including corresponding composites or laminate systems) (all claimed). Typically the apparatus and method are used for epitaxial deposition of silicon layers (using a gaseous mixture of chlorosilanes and hydrogen), e.g. for use in solar cells. ADVANTAGE - The alternating arrangement of gas inlets and outlets causes gas streams to pass through the apparatus in a countercurrent manner, so that parasitic coatings in the apparatus are minimized or completely eliminated (or continuously cleaned off during operation). Continuous operation without interruptions is thus possible, so that markedly increased throughputs can be obtained. The number of parallel substrates passed through the apparatus and the length of the deposition zone can be increased.
Inventor(s)
Reber, S.
Hurrle, A.
Schillinger, N.
Patent Number
102005045582
Publication Date
2007
Language
German