Epitaktische Wrap-Through-Solarzellen mit laenglich ausgepraegten Lochformen sowie Verfahren zu deren Herstellung
DE 102009057984 A1 UPAB: 20110629 NOVELTY - The cell has a non-photovoltaic substrate (1) made of doped silicon and provided with a through-hole that connects front and rear sides of the cell. A channel (2) is formed in the through-hole, and an emitter contact (5) and a base contact (6) are electrically isolated from each other. Ratio of circumference of contour of the channel to a surface area enclosed by the contour of the channel is greater than ratio of the circumference to a surface area of a circle. A photoactive base layer (3) is formed from a semiconductor such as silicon, gallium arsenide or cadmium telluride. DETAILED DESCRIPTION - The channel exhibit ellipsoid, rectangular, concave or convex circumference or rectangular circumference with rounded corners. An INDEPENDENT CLAIM is also included for a method for production of a thin-layered solar cell. USE - Thin-layered solar cell i.e. epitaxy wrap-through (EpiWT) solar cell. ADVANTAGE - The ratio of the circumference of the contour of the channel to the surface area enclosed by the contour of the channel is greater than the ratio of the circumference to the surface area of the circle, so that phenomenon of the current crowding is avoided, thus reducing hole resistance of the solar cell while increasing efficiency of the solar cell.
DE 102009057984 A: 20091211