Hochohmiges Siliziumkarbid und Verfahren zu dessen Herstellung

The object of the invention is a process for the production of high-impendance SiC made of a low-impedance starting material. Said invention consists in overcompensating the flat donor level or a predominantly nitrogen impurity by adding a trivalent element, by integrating this dopant at a specific concentration in the SiC which changes the conductor type from n to p, and by adding a transition metal, which has donor levels in SiC at about the middle of the band gap, and this compensates in turn for the excess acceptor levels in order to achieve a high specific resistance.