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PublicationLaboratory X-ray Microscopy of 3D Nanostructures in the Hard X-ray Regime Enabled by a Combination of Multilayer X-ray Optics( 2024)High-resolution imaging of buried metal interconnect structures in advanced microelectronic products with full-field X-ray microscopy is demonstrated in the hard X-ray regime, i.e., at photon energies > 10 keV. The combination of two multilayer optics—a side-by-side Montel (or nested Kirkpatrick–Baez) condenser optic and a high aspect-ratio multilayer Laue lens—results in an asymmetric optical path in the transmission X-ray microscope. This optics arrangement allows the imaging of 3D nanostructures in opaque objects at a photon energy of 24.2 keV (In-Kα X-ray line). Using a Siemens star test pattern with a minimal feature size of 150 nm, it was proven that features < 150 nm can be resolved. In-Kα radiation is generated from a Ga-In alloy target using a laboratory X-ray source that employs the liquid-metal-jet technology. Since the penetration depth of X-rays into the samples is significantly larger compared to 8 keV photons used in state-of-the-art laboratory X-ray microscopes (Cu-Kα radiation), 3D-nanopattered materials and structures can be imaged nondestructively in mm to cm thick samples. This means that destructive de-processing, thinning or cross-sectioning of the samples are not needed for the visualization of interconnect structures in microelectronic products manufactured using advanced packaging technologies. The application of laboratory transmission X-ray microscopy in the hard X-ray regime is demonstrated for Cu/Cu6Sn5/Cu microbump interconnects fabricated using solid–liquid interdiffusion (SLID) bonding.
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PublicationSensor Systems for Extremely Harsh Environments( 2023-10-31)Sensors are key elements for capturing environmental properties and are today indispensable in the industry for monitoring and control of industrial processes. Many applications are demanding for highly integrated intelligent sensors to meet the requirements on safety, clean and energy efficient operation or to gain process information in the context of industry 4.0. While in many everyday objects highly integrated sensor systems are already state of the art, the situation in an industrial environment is clearly different. Frequently the use of sensor systems is impossible, due to the fact that the extreme ambient conditions of industrial processes like high operating temperatures or strong mechanical loads do not allow a reliable operation of sensitive electronic components. Eight Fraunhofer Institutes have bundled their competencies and have run the Fraunhofer Lighthouse Project ‘eHarsh’ to overcome this situation. The project goal was to realize sensor systems for extremely harsh environments, whereby sensor systems are not only pure sensor elements, rather containing one or multiple sensor elements and integrated readout electronics. Various technologies which are necessary for the realization of such sensor systems have been identified, developed and finally bundled in a technology platform. These technologies are e. g. MEMS and ceramic based sensors, SOI-CMOS based integrated electronics, board assembly and laser based joining technologies. All these developments have been accompanied by comprehensive tests, material characterization and reliability simulations. Based on the platform a pressure sensor for turbine applications has been realized to prove the performance of the eHarsh technology platform.
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PublicationUse of Rotary Ultrasonic Plastic Welding as a Continuous Interconnection Technology for Large-Area e-Textiles( 2023-01-28)
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PublicationInvestigation of failure mechanism of aluminum-scandium wire bond contact under active power cycle test( 2023)The failure mechanism of aluminum-scandium (Al-Sc) wire bond in comparison with pure Al wire bond under active power cycle (APC) test was investigated. To monitor the degradation of the bond quality, bond shear forces (shear force) were measured over the testing cycles at different level of temperature swing (ΔT). The results show that the Al-Sc wire bond was much more robust than the pure Al wire bond when the ΔT (Tmax) was mild. On the other hand, as the ΔT was increased, the shear force reduction in the Al-Sc wire bond became more and more remarkable. In the cross-sectional analysis of bond contact after the APC tests, a significant crack propagation was observed even for low ΔT conditions for the pure Al wire, and the crack progressed primarily on the wire side of the bond area. As for the Al-Sc wire, while the bond crack was efficiently suppressed for low ΔT conditions, a significant progress of crack was observed at high ΔT conditions, and the crack grew mainly through the Al pad side of the bond area. A detailed analysis at the bond interface after the APC test at high ΔT condition revealed three phenomena at the Al pad side of the bond area: grain coarsening, precipitation of Cu particles, and large void formation. As the material strength is compromised by these effects, the crack grew more easily through the Al pad side of the contact area, resulting in a rapid reduction of shear force at high ΔT. The bond failure mechanism obtained in this study will provide a valuable insight for the future development of high reliability power semiconductor device.
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Publication6 Core fiber and VCSEL based interferometer sensor for motion or vibration monitoring( 2023)We demonstrate a XYZ motion / vibration sensor based on a 6-core fiber interferometer and a VCSEL lasers array. The sensor can detect changes in movement as low as 500 um and frequencies ranging from 1 Hz to 100 kHz with potential to extend this range further.
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PublicationIntermetallic growth and thermal impedance at the In32.5Bi16.5Sn/Cu interface( 2023)Present developing trends in the miniaturization and power escalation on electronic components have driven research interest in thermal interface materials (TIMs) to solve the fundamental issue of heat dissipation. Among the various TIMs, the In32.5Bi16.5Sn low melting alloy (LMA) has drawn much attention owing to its low melting point and great bondability, which could mitigate the warpage issue and provide very low thermal interface resistance. In this study, the Cu/In32.5Bi16.5Sn/Cu structure was used to simulate the practical conditions of the application of TIM in joining the substrate and heat sink. The thermal properties before and after an aging test at 80 °C were measured with a thermal tester, and the growth kinetics of the intermetallic compound (IMC) at the In32.5Bi16.5Sn/Cu interface were investigated. Without fast dissolution of Cu into the In32.5Bi16.5Sn alloy, the growth kinetics of the IMC at the interface were found to be diffusion-controlled at the temperature studied. It was found that the main change in the Cu/In32.5Bi16.5Sn/Cu system after the aging test was the thickening of the IMC, and the interface was free of cracks. As the aging time increased, the thermal impedance increased to twice that of the initial value, showing parabolic degradation, which is relevant to the growth kinetics of the IMC at the interface. Implications for the degradation of the thermal performance and further research are also discussed.
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PublicationLovewear: Haptic Clothing that Allows Intimate Exploration for Movement-Impaired People( 2023)
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PublicationCu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration( 2023)Cu-Cu direct interconnects are highly desirable for the microelectronic industry as they allow for significant reductions in the size and spacing of microcontacts. The main challenge associated with using Cu is its tendency to rapidly oxidize in air. This research paper describes a method of Cu passivation using a self-assembled monolayer (SAM) to protect the surface against oxidation. However, this approach faces two main challenges: the degradation of the SAM at room temperature in the ambient atmosphere and the monolayer desorption technique prior to Cu-Cu bonding. In this paper, the systematic investigation of these challenges and their possible solutions are presented. The methods used in this study include thermocompression (TC) bonding, X-ray photoelectron spectroscopy (XPS), shear strength testing, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX). The results indicate nearly no Cu oxidation (4 at.%) for samples with SAM passivation in contrast to the bare Cu surface (27 at.%) after the storage at −18 °C in a conventional freezer for three weeks. Significant improvement was observed in the TC bonding with SAM after storage. The mean shear strength of the passivated samples reached 65.5 MPa without storage. The average shear strength values before and after the storage tests were 43% greater for samples with SAM than for the bare Cu surface. In conclusion, this study shows that Cu-Cu bonding technology can be improved by using SAM as an oxidation inhibitor, leading to a higher interconnect quality.
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PublicationMechanical properties of structured copper and printed silver hybrid stretchable electronic systems( 2023)Stretchable electronics can be realized using different manufacturing methods and hybrids thereof. An example of the latter is the combination of stretchable circuit boards with screen-printing, which will be discussed in this work. The hybrid stretchable electronics structures are based on photolithographically structured and rigid copper islands and screen-printed silver ink interconnections. This enables the assembly of components with a high number of contacts onto the copper islands and deformable silver ink lines between islands. The transition area between islands and lines is critical due to local stress concentration. The effect and potential mitigations were studied by measuring the electrical resistance of test interconnections under mechanical loading. The first set of samples was elongated up to 30% in tensile tests. The second set of samples was elongated 10%, 20%, and 30% in cyclic tests up to 10 000 cycles. After the tests, extensive failure analysis, e.g. scanning electron microscope, and finite element analysis were conducted. In tensile tests at maximum load, the interconnections either snap apart or their resistance increases by 640% in the transition area. Adding protective structures around the transition area, the resistance increase can be reduced to 12%. Stress concentration in the transition area can be controlled with the layout of the structures, as shown in the cyclic tests. Depending on a layout, the structures protect interconnections in the transition area (resistance <4 Ω at 10% and 20% throughout 10 000 cycles, and up to 5000 cycles at 30% elongation), or with particular designs, cause fatal damage of the circuitry and fail early. The identified failure mechanism is typically fatigue damage caused by the repeated bending of the protective structure. The observed resistance increase at the interface was closely related to the crack propagation phase in the protective structures.
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PublicationA Direct Real-Time Observation of Anion Intercalation in Graphite Process and Its Fully Reversibility by SAXS/WAXS Techniques( 2023)The process of anion intercalation in graphite and its reversibility plays a crucial role in the next generation energy-storage devices. Herein the reaction mechanism of the aluminum graphite dual ion cell by operando X-ray scattering from small angles to wide angles is investigated. The staging behavior of the graphite intercalation compound (GIC) formation, its phase transitions, and its reversible process are observed for the first time by directly measuring the repeated intercalation distance, along with the microporosity of the cathode graphite. The investigation demonstrates complete reversibility of the electrochemical intercalation process, alongside nano- and micro-structural reorganization of natural graphite induced by intercalation. This work represents a new insight into thermodynamic aspects taking place during intermediate phase transitions in the GIC formation.
