Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM

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  • Publication
    Entwicklung eines MIMO-Radarfrontends auf Glasinterposer Basis fürs autonome Fahren
    ( 2019)
    Tschoban, C.
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    Fritsche, C.
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    Böttcher, M.
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    Steller, W.
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    Ndip, I.
    ;
    Pötter, H.
    Innerhalb dieser Veröffentlichung wird ein innovatives, modulares 79-GHz-MIMO-Radar-Konzept mit Anwendungsfokus ""Autonomes Fahren"" vorgestellt. Das elektrische Design des Aufbaus folgt der systematischen Systemauslegung mittels des M3-Ansatzes (Method, Models and Measures). Bei diesem Ansatz wird durch eine exakte Analyse der Anwendung die Systemspezifikation erarbeitet und auf deren Basis die Komponenten spezifiziert sowie das Packaging-Konzept entwickelt (Methods). Anhand der Spezifikation und des Packaging-Konzepts werden für alle Komponenten Simulationsmodelle abgeleitet und die die Performance des gesamten Systems simuliert (Models). Darauf aufbauend erfolgt das Design der Komponenten sowie die messtechnische Evaluation der Modelle anhand realer Aufbauten. Anhand der Ergebnisse werden Design-Regeln abgeleitet, welche für den finalen Aufbau/Layout verwendet werden (Measures). Die Veröffentlichung zeigt die praktische Anwendung des Ansatzes bei der Entwicklung eines neuartigen MIMO-Frontenddesigns für ein 79-GHz-Radarsystem auf Basis der Glasinterposer-Technologie .
  • Publication
    Energy autarkic wireless sensor node for reliable long-term exposure to domestic waste water in a sewage system
    ( 2018)
    Leverenz, E.
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    Becker, K.-F.
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    Koch, M.
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    Straube, S.
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    Pötter, H.
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    Lang, K.-D.
    A sensor system is developed for long term monitoring of environmental parameters such as pH, conductivity and temperature in sewage systems. The ultra-low power design of the sensing electronics enables the system to perform long-term measurements without the need of external power supplies or the change of batteries. The modular housing concept as well as the sensing elements withstand the harsh conditions and have as little influence on the environment as possible. The integration of the sensor probes into the housing design was a trade-off between a sufficient protection of the sensitive sensing areas against contamination and damage and a good contact to the observed medium for a fast response time of the sensors.
  • Publication
    Analytical modeling and measurement of vias in PCB-Technology up to 20 GHz
    ( 2018)
    Perlwitz, P.
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    Curran, B.
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    Tschoban, C.
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    Ndip, I.
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    Pötter, H.
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    Lang, K.-D.
    In this paper, an efficient analytical method for evaluation of return-path discontinuities (RPD) of interconnects in multilayered PCBs is proposed. There for equivalent circuits were examined and the inductance and capacitance were calculated. Two kinds of simulation approaches were used to quantify the considered closed-form expressions. The intention of this work is to examine the return current path of transiting signal vias with return vias in multilayer printed circuit boards from 100 MHz to 20 GHz. Therefore analytical, numerical-, and measurement-based methods for extracting the inductance and capacitance of via transitions were quantified and compared. Measurements with a PNA are made to verify these results. It could be shown that the analytical approach has a good correlation to the measurements with a deviation of 10% up to 8 GHz and lies within the manufacturing tolerance of the PCB producer. Measurements up to 20 GHz showed that these simplified models are no longer valid.
  • Publication
    RF-MEMS technology for future mobile and high-frequency applications: Reconfigurable 8-Bit power attenuator tested up to 110 GHz
    ( 2016)
    Iannacci, J.
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    Huhn, M.
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    Tschoban, C.
    ;
    Pötter, H.
    In this letter, we present and test-to the best of our knowledge, for the first time-, an 8-bit (256-state) reconfigurable RF-MEMS attenuator, from 10 MHz up to 110 GHz, realized in the CMM-FBK technology. Resistive loads, in series and shunt configuration, are selectively inserted on the RF line by means of electrostatic MEMS ohmic switches. The network exhibits several attenuation levels in the range of -10/-45 dB that are rather flat up to 50 GHz, and a certain number of configurations with VSWR smaller than 4 from nearly dc up to 110 GHz, and better than 2 on a frequency span of ~80 GHz.
  • Publication
    Broadband dielectric material characterization of epoxy molding compound
    ( 2016)
    Huhn, M.
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    Tschoban, C.
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    Pötter, H.
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    Ndip, I.
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    Braun, T.
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    Lang, K.-D.
  • Publication
    RF-MEMS for 5G mobile communications: A basic attenuator module demonstrated up to 50 GHz
    ( 2016)
    Iannacci, J.
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    Tschoban, C.
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    Reyes, J.
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    Maaß, U.
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    Huhn, M.
    ;
    Ndip, I.
    ;
    Pötter, H.
    After fluctuating expectations and disillusionments, RF-MEMS technology is starting to make its way into market applications. To this regard, the upcoming field of 5G seems to be the fitting application area for such a technology to fully express its potential. In this work, we present an RF-MEMS basic 2-state attenuator module, simulated and measured up to 50 GHz. A series resistive load, inserted on the RF line, can be shorted by electrostatically actuating a suspended Gold thin membrane. When the load is inserted, a rather flat attenuation level (S21) is observed over the whole range, it spanning from -9 dB to -6 dB as the frequency increases. On the other hand, when shorted, the module exhibits a loss (S21) better than -1.4 dB up to 50 GHz. The discussed basic module can then be exploited as building block to implement more complex RF signal conditioning functions.
  • Publication
    RF-MEMS Technology for 5G: Series and Shunt Attenuator Modules Demonstrated up to 110 GHz
    ( 2016)
    Iannacci, J.
    ;
    Huhn, M.
    ;
    Tschoban, C.
    ;
    Pötter, H.
    RF-MEMS technology is emerging as a key enabling solution to address demanding requirements that upcoming 5G standards pose upon passive devices and networks. In this work, we demonstrate experimentally-to the best of our knowledge, for the first time-, RF-MEMS 2-state basic attenuator modules, from nearly-DC up to 110 GHz. Physical samples are realized in the CMM-FBK RF-MEMS technology, and design variations are tested. Resistive loads are placed in series or shunt configuration on the RF line, and the attenuation is ON/OFF switched by electrostatically driven MEMS micro-relays. Tested devices show attenuation levels (S21) from-5 dB to-10 dB, depending on the resistive load, with flatness of 2-3 dB from 10 MHz to 50 GHz and of around 2 dB from 60 GHz up to 110 GHz. When OFF, the attenuator modules introduce loss (S21) better than-1 dB up to 50 GHz and better than-6 dB up to 110 GHz.
  • Publication
    Optimization of the return current paths of interposer TSVs for frequencies up to 110GHz
    ( 2015)
    Curran, B.
    ;
    Lang, K.-D.
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    Ndip, I.
    ;
    Pötter, H.
    Silicon interposer technology with through-silicon-vias will play a significant role in the development of future 2.5D systems. Furthermore, such systems will have high density and real-time computing requirements, leading to smaller sizes and higher bit-rates. In this paper, through-silicon-via structures in normal resistivity silicon with 3 different return current configurations are modeled and measured. It is shown that reflections and attenuations in the transmission structure can be predicted and reduced with predictive modeling using full-wave simulation techniques. With a silicon conductivity of 25 S/m, the examined TSV structures enter the quasi-TEM mode between 10GHz and 20GHz with a transmission coefficient of ca. -3dB. The transmission coefficient decreases between -5dB and -7dB, depending on the design of the structure. Reflection coefficients for all three structures reaches a maximum of -11dB as the structure enters the quasi-TEM mode.
  • Publication
    A modeling approach for predicting the effects of dielectric moisture absorption on the electrical performance of passive structures
    ( 2014)
    Curran, B.
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    Ndip, I.
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    Engin, E.
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    Bauer, J.
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    Pötter, H.
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    Lang, K.-D.
    ;
    Reichl, H.
    In this paper a modeling approach for predicting the electrical behavior of nonresonant and resonant structures under the influence of the absorption of moisture into the dielectric is presented. The paper focuses on the encapsulation materials used for printed circuit boards (PCBs) as a case study. For the investigated cases, analytical modeling shows that the loss of electrical insulation resulting from moisture absorption has minimal effects on the losses in transmission lines (TMLs), which would only cause system failure when combined with other aging effects. However, potential cases are discussed where the loss of electrical insulation could be significantly increased. Full-wave modeling shows that moisture absorption can cause the detuning of passive components, specifically antennas and impedance-controlled TMLs, that can have significant effects on system performance. Antenna resonance frequencies shift by up to 3-5%.
  • Publication
    RFID plus: Aktive Funk-Etiketten zur Bestandskontrolle
    ( 2012)
    Pötter, H.
    ;
    Hampicke, M.
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    Seifert, S.
    ;
    Thomas, M.
    Das Betreiben eigener Webshops hat für Marken-Hersteller zahlreiche Vorteile: Preis-Hoheit, direkter Kundenkontakt und positive Image-Effekte sind nur einige davon. Um hier keine Konkurrenzsituation zu den Fachhändlern ""vor Ort"" aufkommen zu lassen sowie insbesondere die Präsenz und das Distributionsnetz nutzen zu können, bietet sich die Verbindung des eigenen Marken-Webshops mit dem stationären Fachhandel an. Diese Händler-Integration in Marken-Webshops bringt Vorteile, zieht aber auch Herausforderungen nach sich.