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Characterization of anodic bondable LTCC for wafer-level packaging

2016 , Hu, Xiaodong , Bäuscher, Manuel , MacKowiak, Piotr , Zhang, Yucheng , Hoelck, Ole , Walter, Hans , Ihle, Martin , Ziesche, Steffen , Hansen, Ulli , Maus, Simon , Gyenge, Oliver , Mukhopadhyay, Biswajit , Ehrmann, Oswin , Lang, Klausdieter , Ngo, Haduong

This work helps to clarify the effects on bondable Low Temperature Cofiered Cofired Ceramic(LTCC) material from Fraunhofer IKTS under different bonding conditions as changes in temperature, voltage and time. The Paper investigates silicon bonded to LTCC and silicon with a thin aluminum layer bonded to LTCC and compares both with anodic bonding of standard Borofloat 33® from Schott GmbH to silicon. The result of this work provides a comprehensive overview of bonding parameters for the materials Borofloat 33® and LTCC. An inspection of the bonding quality is carried out, which includes the optical inspection of the bonded area and interface observation via a scanning electron microscope (SEM). The bonding quality is also shown with the charge transfer during the bonding process. This paper can be used to achieve a higher degree of freedom in the design of hermetic wafer level packaging for various Micro-Electro-Mechanical System(MEMS)devices made of glass and ceramic materials.

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HOT-300 - a multidisciplinary technology approach targeting microelectronic systems at 300 °C operating temperature

2016 , Vogt, Holger , Altmann, Frank , Braun, Sebastian , Celik, Yusuf , Dietrich, Lothar , Dietz, Dorothee , Dijk, Marius van , Dreiner, Stefan , Döring, Ralf , Gabler, Felix , Goehlich, Andreas , Hutter, Matthias , Ihle, Martin , Kappert, Holger , Kordas, Norbert , Kokozinski, Rainer , Naumann, Falk , Nowak, Torsten , Oppermann, Hermann , Partsch, Uwe , Petzold, Matthias , Roscher, Frank , Rzepka, Sven , Schubert, Ralph , Weber, Constanze , Wiemer, Maik , Wittler, Olaf , Ziesche, Steffen

Several applications in the fields of industrial sensors and power electronics are creating a demand for high operating temperature of 300 °C or even higher. Due to the increased temperature range new potential defect risks and material interactions have to be considered. As a consequence, innovation in semiconductor, devices and packaging technologies has to be accompanied by dedicated research of the reliability properties. Therefore various investigations on realizing high temperature capable electronic systems have shown that a multidisciplinary approach is necessary to achieve highly reliable solutions. In the course of the multi-institute Fraunhofer internal research program HOT-300 several aspects of microelectronic systems running up to 300 °C have been investigated like SOI-CMOS technology and circuits, silicon capacitor devices, a capacitive micromachined ultrasonic transducer (CMUT), ceramic substrates and different packaging and assembly techniques. A ceramic molded package has been developed. Die attach on different leadframe alloys were investigated using silver sintering and transient liquid phase bonding (TLPB). Copper and gold wire bonding was studied and used to connect the chips with the package terminals. Investigations in flip chip technology were performed using Au/Sn and Cu/Sn solder bumps for transient liquid phase bonding. High operating temperatures result in new temperature driven mechanisms of degradation and material interactions. It is quite possible that the thermomechanical reliability is a limiting factor for the technology to be developed. Therefore investigations on material diagnostics, reliability testing and modeling have been included in the project, complementing the technology developments.