Fraunhofer-Institut für Photonische Mikrosysteme IPMS

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  • Publication
    Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer
    ( 2022)
    Seidel, Konrad
    ;
    Lehninger, David
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    Hoffmann, Raik
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    Mähne, H.
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    Ali, Tarek Nadi Ismail
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    Revello Olivo, Ricardo Orlando
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    Lederer, Maximilian
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    Bernert, K.
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    Biedermann, Kati
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    Thiem, S.
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    Mertens, Konstantin
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    Heinig, Andreas
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    Landwehr, Matthias
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    Shen, Yukai
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    Wang, Defu
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    Kämpfe, Thomas orcid-logo
    In our work we describe and demonstrate an alternative approach of integrating 1T-1C FeFET having separated transistor (1T) without modifying frontend CMOS technology and an additional gate-coupled ferroelectric (FE) capacitor (1C) embedded in the interconnect layers. Starting from the results of FE capacitor integration and 1T-1C single cell characterization this paper describes realization and results of a fully integrated 8 kbit memory array implementation.
  • Publication
    Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability
    ( 2022)
    Ali, Tarek Nadi Ismail
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    Revello Olivo, Ricardo Orlando
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    Kerdiles, S.
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    Lehninger, David
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    Lederer, Maximilian
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    De, Sourav
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    Royet, A.-S.
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    Sünbül, Ayse
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    Prabhu, Aditya
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    Kühnel, Kati
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    Czernohorsky, Malte
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    Rudolph, Matthias
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    Hoffmann, Raik
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    Charpin-Nicolle
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    Grenouillet, L.
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    Kämpfe, Thomas orcid-logo
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    Seidel, Konrad
    Study on the effect of nanosecond laser anneal (NLA) induced crystallization of ferroelectric (FE) Si-doped hafnium oxide (HSO) material is reported. The laser energy density (0.3 J/cm2 to 1.3 J/cm2) and pulse count (1.0 to 30) variations are explored as pathways for the HSO based metal-ferroelectric-metal (MFM) capacitors. The increase in energy density shows transition toward ferroelectric film crystallization monitored by the remanent polarization (2Pr) and coercive field (2Ec). The NLA conditions show maximum 2Pr (∼ 24 μ C cm2) comparable to the values obtained from reference rapid thermal processing (RTP). Reliability dependence in terms of fatigue (107 cycles) of MFMs on NLA versus RTP crystallization anneal is highlighted. The NLA based MFMs shows improved fatigue cycling at high fields for the low energy densities compared to an RTP anneal. The maximum fatigue cycles to breakdown shows a characteristic dependence on the laser energy density and pulse count. Leakage current and dielectric breakdown of NLA based MFMs at the transition of amorphous to crystalline film state is reported. The role of NLA based anneal on ferroelectric film crystallization and MFM stack reliability is reported in reference with conventional RTP based anneal.
  • Publication
    Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions
    ( 2022)
    Sünbül, Ayse
    ;
    Ali, Tarek Nadi Ismail
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    Hoffmann, Raik
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    Revello Olivo, Ricardo Orlando
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    Raffel, Yannick
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    Duhan, P.
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    Lehninger, David
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    Kühnel, Kati
    ;
    Rudolph, Matthias
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    Oehler, Sebastian
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    Schramm, Philipp
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    Czernohorsky, Malte
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    Seidel, Konrad
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    Kämpfe, Thomas orcid-logo
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    Eng, L.M.
    Hafnium oxide-based ferroelectric tunnel junctions (FTJs) are novel nonvolatile memory devices with promising advantages such as non-destructive readout in comparison to conventional ferroelectric random access memories (FRAMs). Reliability aspects of FTJ devices need to be investigated, including their endurance, retention, ferroelectric switching, breakdown characteristics, and memory window (MW). These characteristics exhibit promising results at room temperature; however, further analysis is required for different operating temperatures. Therefore, in this work, we demonstrate the FTJ device characteristics at different temperatures varying from -40 °C to 60 °C. The results indicate that high temperatures cause higher MW of FTJs, whereas the FTJ lifetime increases at lower operating temperatures.
  • Publication
    Compressive Sensing instrumental concepts for space applications
    ( 2022)
    Raimondi, V.
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    Baldi, M.
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    Berndt, Dirk
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    Bianchi, T.
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    Borque Gallego, G.
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    Borrelli, D.
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    Corti, C.
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    Corti F.
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    Corti, M.
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    Dauderstädt, Ulrike
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    Dürr, Peter
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    Gonnelli, A.
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    Francés González, Sara orcid-logo
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    Guzzi, D.
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    Kunze, Detlef
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    Labate, D.
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    Lamquin, N.
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    Lastri, C.
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    Magli, E.
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    Marzi, E.
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    Nardino, V.
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    Pache, C.
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    Palombi, L.
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    Pilato G.
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    Suetta, E.
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    Valsesia, D.
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    Wagner, Michael
    The need of high-resolution Earth Observation (EO) images for scientific and commercial exploitation has led to the generation of an increasing amount of data with a material impact on the resources needed to handle data on board of satellites. In this respect, Compressive Sensing (CS) can offer interesting features in terms of native compression, onboard processing and instrumental architecture. In CS instruments the data are acquired natively compressed by leveraging on the concept of sparsity, while on-board processing is offered at low computational cost by information extraction directly from CS data. In addition, instrument's architecture can enjoy super-resolution capabilities that ensure a higher number of pixels in the reconstructed image with respect to that natively provided by the detector. In this paper, we present the working principle and main features of a CS demonstrator of a super-resolved instrument for EO applications with ten channels in the visible and two channels in the medium infrared. Besides the feature of merging in a single step the acquisition and compression phases of the image generation, its architecture allows to reach a super-resolution factor of at least 4x4 in the images reconstructed at the end of process. The outcome of the research can open the way to the development of a novel class of EO instruments with improved Ground Sampling Distance (GSD) - with respect to that one provided natively by the number of sensing elements of the detector - and impact EO applications thanks to native compression, on-board processing capabilities and increased GSD.
  • Publication
    Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology
    ( 2022)
    Lehninger, David
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    Mähne, H.
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    Ali, Tarek Nadi Ismail
    ;
    Hoffmann, Raik
    ;
    Revello Olivo, Ricardo Orlando
    ;
    Lederer, Maximilian
    ;
    Bernert, K.
    ;
    Kämpfe, Thomas orcid-logo
    ;
    Biedermann, Kati
    ;
    Landwehr, Matthias
    ;
    Heinig, Andreas
    ;
    Thiem, S.
    ;
    Mertens, Konstantin
    ;
    Wang, Defu
    ;
    Shen, Yukai
    ;
    Seidel, Konrad
    Recently, hafnium oxide based ferroelectric memories gained great attention due to good scalability, high speed operation, and low power consumption. In contrast to the FRAM concept, the FeFET offers non-destructive read-out. However, the integration of the FeFET into an established CMOS technology entails several challenges. Herein, an 1T1C FeFET with separated transistor (1T) and ferroelectric capacitor (1C) is described and demonstrated. This alternative approach can be integrated into standard process technologies without introducing significant modifications of the front-end-of-line. All important steps starting from the integration of MFM devices into the BEoL through the fabrication and characterization of single 1T1C memory cells with various capacitor area ratios for bit cell tuning up to the initial demonstration of an 8 kbit test-array are covered.
  • Publication
    MEMS Piston Mirror Arrays for Computer Generated Holography
    ( 2022)
    Dürr, Peter
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    Neudert, Andreas
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    Nitzsche, Mario
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    Hohle, Christoph
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    Stolle, H.
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    Pleikies, J.
    Computer generated holography (CGH) offers the best possible solution for very interesting applications like virtual, augmented and mixed reality. To get the images from the computer into the real world, spatial light modulators (SLMs) are required that fulfil very demanding specifications. Unfortunately, none of the currently available kinds of SLMs can meet this challenge fully. Within the European Union funded Project REALHOLO we are therefore developing a novel kind of MEMS (micro electro mechanical system) SLM especially for CGH applications. The challenge is to modulate the phase of incoming coherent light with millions of individually controllable pixels. The pixels have to be only a few micrometers in size for acceptable diffraction angles and still have a stroke range of half the wavelength of visible light, about 350nm. Within this range, each pixel needs to be set very precisely to one of many deflection levels at frame rates of more than one kHz. This paper discusses the challenge and our solution: an innovative MEMS comb drive actuator array, monolithically integrated on top of a CMOS backplane. The advantages of this design are compared to other types of SLMs and its superior performance is shown by FEM simulations. We also discuss the impact of effects like charging and fabrication imperfections on the deflection precision. Our newly developed MEMS technology and SLM will also enable many other applications that may benefit from the fast and precise phase modulation by a large number of pixels, like wave front shaping or quickly re-programmable diffractive optical elements (DOEs).