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  4. Performance analysis of a large photoactive area CMOS line sensor for fast, time-resolved spectroscopy applications
 
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2014
Conference Paper
Title

Performance analysis of a large photoactive area CMOS line sensor for fast, time-resolved spectroscopy applications

Abstract
The performance of a fabricated CMOS line sensor based on the lateral drift-field photodiode (LDPD)1 concept is described. A new pixel structure was designed to decrease the charge transfer time across the photoactive area. Synopsys TCAD simulations were performed to design a proper intrinsic lateral drift-field within the pixel. The line sensor was fabricated in the 0.35 µm CMOS technology, and further characterized using a tailored photon-transfer method2 and the EMVA 1288 standard3. The basic parameters such as spectral responsivity, photo-response non-uniformity and dark current were measured at fabricated sensor samples. A special attention was paid to charge transfer time characterization4 and the evaluation of crosstalk between neighboring pixels - two major concerns attained during the development. It is shown that the electro-optical characteristics of the developed line sensor are comparable to those delivered by CCD line sensors available on the market, which are normally superior in performance compared to their CMOS based counterparts, but offering additional features such as the possibility of time gating, non-destructive readout, and charge accumulation over several cycles: approaches used to enhance the signal-to-noise ratio (SNR) of the sensor output.
Author(s)
Poklonskaya, Elena
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Durini, Daniel
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Jung, Melanie  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Schrey, Olaf  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Driewer, Adrian
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Brockherde, Werner  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Hosticka, Bedrich J.
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Vogt, Holger
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Mainwork
Optical Sensing and Detection III  
Conference
Conference "Optical Sensing and Detection" 2014  
DOI
10.1117/12.2051318
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • CMOS line sensor

  • Lateral drift-field photodetector (LDPD)

  • time-resolved spectroscopy

  • large area pixel

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