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Coplanar amplifiers up to W-band using InP-based dual-gate HEMTs

: Baeyens, Y.; Zanden, K. van der; Schreurs, D.; Nauwelaers, B.; Hove, M. van; Rossum, M. van; Braunstein, J.

	Network GmbH, Hagenburg: MIOP '97. Mikrowellen und Optronik. Kongreßunterlagen Hagenburg: Network GmbH, 1997 ISBN: 3-924651-53-1 pp.61-65 : Ill.
	Kongreßmesse für Hochfrequenztechnik, Funkkommunikation und Elektromagnetische Verträglichkeit (MIOP) <9, 1997, Sindelfingen>

	English
	Conference Paper
	Fraunhofer IAF ()
	HEMT; integrated circuit; integrierte Schaltung; MMIC

Abstract
The performance of InP-based dual-gate HEMTs in a cascode configuration is demonstrated by the realization of a number of coplanar amplifiers. Three single-stage dual-gate amplifiers with a stable insertion gain of 16.4, 12.4 and 7.5 dB at respectively 58.5, 93.5 and 111 GHz are successfully realized. For a distributed amplifier using meandered coplanar lines a gain of 8.8 dB with a 3-dB bandwidth of 97 GHz is obtained.

: http://publica.fraunhofer.de/documents/PX-8681.html