Characterization of Nanocrystalline Ta(N,O) - Diffusions Barriers for Use in Semiconductor Metallization with Scanning Force Microscopy

A comparison between reactively sputtered Ta-based diffusion barriers is presented. The microstructure of the thin films was analysed using mainly atomic force microscopy. Film composition, crystallographic structure, internal stress and resistivity were characterized by AES, XRD, bow and four point probe measurement. Finally, using a bending module the film behaviour under mechanical load was determined.