• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion
 
  • Details
  • Full
Options
1995
Journal Article
Title

Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion

Other Title
Verschiebung der Emissionswellenlänge von pseudomorphen InGaAs-GaAs/AlGaAs-Hochgeschwindigkeitslaserdioden mittels deckschichtinduzierter Interdiffusion
Abstract
The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of high-speed In0.35 Ga0.65 As-GaAs multiple quantum well lasers. Modulation bandwidths of up to 26 GHz (Ibias = 50 mA) and modulation current efficiency factors of 5 GHz/mA1/2 are demonstrated for 3 x 100 My square meter ridge waveguide lasers following wavelength shifts of 32 nm (34 meV). These results demonstrate the feasibility of fabricating monolithic multiple wavelength laser arrays in which each element is capable of low-bias-current direct modulation at bandwidths exceeding 20 GHz.
Author(s)
Bürkner, S.
Ralston, J.D.
Weisser, S.
Sah, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Larkins, E.C.
Rosenzweig, Josef  
Journal
IEEE Photonics Technology Letters  
DOI
10.1109/68.414662
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • deckschichtinduzierte Interdiffusion

  • high-speed laser

  • Hochgeschwindigkeitsdatenübertragung

  • impurity-free interdiffusion

  • MQW structures

  • MQW-Strukturen

  • strain

  • Verspannung

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024