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  4. Strain relaxation in high-speed p-i-n photodetectors with In0.2Ga0.8As/GaAs multiple quantum wells.
 
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1993
Journal Article
Title

Strain relaxation in high-speed p-i-n photodetectors with In0.2Ga0.8As/GaAs multiple quantum wells.

Other Title
Spannungsrelaxation in Hochgeschwindigkeits-p-i-n Photodetektoren mit In0.2Ga0.8As/GaAs Multiple-Quantentopfstrukturen
Abstract
We have used high-resolution x-ray diffraction and photocurrent spectroscopy to investigate strain relaxation in Insub0.2Gasub0.8As/GaAs multiple quantum wells and its influence on the optoelectronic and electronic properties of high-speed p-i-n photodetectors. In combination with numerical simulations and subband calculations, both methods allowed us to determine the degree of lattice relaxation. The results consistently show that lattice relaxation does not occur abruptly, but that the degree of relaxation increases gradually with increasing number of wells. In spite of the onset of lattice relaxation, these photodetectors exhibit a quantum efficiency of unity and recombination lifetimes in excess of 500 ps.
Author(s)
Bender, G.
Larkins, E.C.
Schneider, H.
Ralston, J.D.
Koidl, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Applied Physics Letters  
DOI
10.1063/1.110273
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InGaAs/GaAs

  • Multiple-Quantentopfstruktur

  • photodetector

  • Photodetektor

  • quantum wells

  • Spannungsrelaxation

  • strain relaxation

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