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  4. The selective etching of H+ ions and its effect on the oriented growth of diamond films
 
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1997
Journal Article
Title

The selective etching of H+ ions and its effect on the oriented growth of diamond films

Abstract
A novel etching effect of hydrogen ions on the growth of diamond films was observed. The H+ ion bombardment was performed by applying a negative substrate bias during a microwave plasma chemical vapor deposition process, using only hydrogen as a reactant gas. The effect of this bombardment was investigated by means of scanning electron microscopy. It was found that the etching efficiency of H+ ions on non-[001]-oriented grains is more significant than that on grains with their (001) faces parallel to the substrate. A lateral growth of the (001) faces can occur during the bombardment process. As a result, the size of (001) faces increases after H+ etching while grains with other directions are etched off. This effect provides a way to improve the orientation degree of [001] oriented diamond films and might be helpful for obtaining [001] oriented diamond films with small thickness.
Author(s)
Jiang, X.
Xia, Y.B.
Zhang, W.J.
Journal
Journal of applied physics  
DOI
10.1063/1.365995
Language
English
Fraunhofer-Institut für Schicht- und Oberflächentechnik IST  
Keyword(s)
  • elemental-semiconductors

  • diamond

  • thin films

  • plasma etching

  • etching

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