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  4. Raman scattering form extremely thin a-C-H films deposited on semiconductors
 
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1987
Conference Paper
Title

Raman scattering form extremely thin a-C-H films deposited on semiconductors

Abstract
Hard amorphous carbon (a-C:H) films with thicknesses varying from 10 Angstroem to 2000 Angstroem were plasma-deposited on Si or Ge and studied by Raman spectroscopy. The main peak in the Raman spectrum, which is at approx. 1520 cm-1 for thick a-C:H films, shows a frequency down shift for layers thinner than approx. 100 Angstroem. This mode softening, which amounts to 70 cm-1 for 10 Angstroem a-C:H on Si, is substrate dependent and reflects the carbon-substrate bonding at the interface. For films with an optical thickness of approx. 1/4 of the exciting laser wavelength, a pronounced enhancement of the Raman scattering intensity is observed, which is explained by interference enhanced Raman scattering. (IAF)
Author(s)
Koidl, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ramsteiner, M.
Wagner, J.
Wild, C.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Proceedings of the Int.Symposium on Trends and New Applications in Thin Films  
Conference
International Symposium on Trends and New Applications in Thin Films (TATF) 1987  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • amorphe Kohlenstoffschicht

  • Grenzfläche

  • interferenzverstärkte Ramanstreuung

  • Schichtsubstrat

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