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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model
Optimierung von 3D-SMODFETs auf GaAs- und InP-Substraten mit einem einfachen analytischen Modell
| Maracas, G.N. ; IEEE Communications Society; Cornell University, Ithaca/NY:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1995. Proceedings
New York: IEEE, 1995
ISBN: 0-7803-2442-0
pp.132-140 |
| Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits <1995, Ithaca/NY> |
|
| English |
| Conference Paper |
| Fraunhofer IAF () |
| GaAs; InP; SMODFETs |
Abstract
Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures.