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  4. Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model
 
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1995
Conference Paper
Title

Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model

Other Title
Optimierung von 3D-SMODFETs auf GaAs- und InP-Substraten mit einem einfachen analytischen Modell
Abstract
Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures.
Author(s)
Martin, G.H.
Seaford, K.L.
Spencer, R.
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Eastman, L.F.
Mainwork
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1995. Proceedings  
Conference
Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1995  
DOI
10.1109/CORNEL.1995.482428
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • InP

  • SMODFETs

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