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Monolithic integrated 75 GHz oscillator with high output power using a pseudomorphic HFET

Monolithisch integrierter 75 GHz-Oszillator mit hoher Ausgangsleistung unter Verwendung eines pseudomorphen HFET

: Bangert, A.; Schlechtweg, M.; Reinert, W.; Haydl, W.H.; Hülsmann, A.; Köhler, K.

	Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium digest 1994 New York/N.Y., 1994 (IEEE MTT-S International Microwave Symposium Digest) ISSN: 0149-645X pp.135-138 : Abb.,Lit.
	International Microwave Symposium <1994, San Diego/Calif.>

	English
	Conference Paper
	Fraunhofer IAF ()
	high power; hohe Leistung; MMIC; oscillator; Oszillator; pseudomorphe HEMTs; pseudomorphic HEMT; W-band

Abstract
Recently, there has been growing interest in MMICs for circuit applications in the 76 to 77 GHz frequency range allocated for automotive systems in Europe. We have designed and fabricated an oscillator for a frequency of 75 GHz, using a quasi linear approach combined with a simple matching procedure to achieve maximum output power. The MMICs were fabricated using pseudomorphic GaAs HFETs with mushroom gates (0.16 mym length, 2 x 25 mym width) as the active devices. The output power of the oscillator was 8 mW at 75 GHz with a drain bias of V sub Ds = 3V. To our knowledge, this is the highest output power from a single stage HFET oscillator at this frequency.

: http://publica.fraunhofer.de/documents/PX-24983.html