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MODFET technology optimization for MMICs using statistical microwave characterization

MODFET-Technologie-Optimierung für MMICs mit statistischer Mikrowellen-Charakterisierung


23rd European Microwave Conference '93. Proceedings
pp.107-109 : Abb.,Tab.,Lit.
European Microwave Conference (EuMC) <23, 1993, Madrid>
Conference Paper
Fraunhofer IAF ()
microwave measurement; Mikrowellen-Messung; MMIC; MODFET; Technologieoptimierung; technology optimization

77 GHz LNAs and TWAs operating from DC to 80 GHz were fabricated successfully (1),(2) using a highly reproducible MODFET technology with mushroom gates of 0.16 mym length. Technology development and optimization were carried out using DC and RF wafer mapping. A high yield high performance transistor process required for 70 to 80 GHz applications was therefore established.