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  4. MODFET technology optimization for MMICs using statistical microwave characterization
 
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1993
Conference Paper
Title

MODFET technology optimization for MMICs using statistical microwave characterization

Other Title
MODFET-Technologie-Optimierung für MMICs mit statistischer Mikrowellen-Charakterisierung
Abstract
77 GHz LNAs and TWAs operating from DC to 80 GHz were fabricated successfully (1),(2) using a highly reproducible MODFET technology with mushroom gates of 0.16 mym length. Technology development and optimization were carried out using DC and RF wafer mapping. A high yield high performance transistor process required for 70 to 80 GHz applications was therefore established.
Author(s)
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tasker, P.J.
Hülsmann, A.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kaufel, G.
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
23rd European Microwave Conference '93. Proceedings  
Conference
European Microwave Conference (EuMC) 1993  
DOI
10.1109/EUMA.1993.336803
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • microwave measurement

  • Mikrowellen-Messung

  • MMIC

  • MODFET

  • Technologieoptimierung

  • technology optimization

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