Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Mixed-Signal Schaltkreise in einer AlGaAs/GaAs/AlGaAs Quanten-Well HEMT Technologie
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Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M. | MTT/ED/AP/LEO Societies Joint Chapter; IEEE Electron Devices Society:
Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications 1997
S.l.: IEEE, 1997
ISBN: 0-7803-4135-X
ISBN: 0-7803-4136-8
pp.151-156 |
| Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO) <1997, London> |
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| English |
| Conference Paper |
| Fraunhofer IAF () |
| GaAs; HEMT; mixed-signal; MMIC; phase shifter; Phasenschieber; PLL; TDM |
Abstract
During the past 5 years numerous mixed signal circuits have been designed, processed, and characterized based on our 0.2 mu m gate length AlGaAs/GaAs/AlGaAs E/D quantum well HEMT technology. Utilizing the inherent advantages of this material system, optical, analogue, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gbit/s optoelectronic data transmission system, PLL circuits for 15 GHz and 34 GHz, and a 35 GHz phase shifter for phased array antenna applications.