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  4. Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
 
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1997
Conference Paper
Title

Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology

Other Title
Mixed-Signal Schaltkreise in einer AlGaAs/GaAs/AlGaAs Quanten-Well HEMT Technologie
Abstract
During the past 5 years numerous mixed signal circuits have been designed, processed, and characterized based on our 0.2 mu m gate length AlGaAs/GaAs/AlGaAs E/D quantum well HEMT technology. Utilizing the inherent advantages of this material system, optical, analogue, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gbit/s optoelectronic data transmission system, PLL circuits for 15 GHz and 34 GHz, and a 35 GHz phase shifter for phased array antenna applications.
Author(s)
Thiede, A.
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hurm, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wang, Z.-G.
Lang, M.
Leber, P.
Lao, Z.
Nowotny, U.
Rieger-Motzer, M.
Sedler, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bronner, Wolfgang  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fink, T.
Hülsmann, A.
Kaufel, G.
Raynor, B.
Schneider, J.
Jakobus, T.
Schroth, J.
Berroth, M.
Mainwork
Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications 1997  
Conference
Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO) 1997  
DOI
10.1109/EDMO.1997.668590
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • HEMT

  • mixed-signal

  • MMIC

  • phase shifter

  • Phasenschieber

  • PLL

  • TDM

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