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2006
Conference Paper
Title

Coplanar 155 GHz MHEMT MMIC low noise amplifiers

Other Title
Koplanare rauscharme MHEMT Verstärker MMIC bei 155 GHz
Abstract
This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2x15 µm in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.
Author(s)
Kantanen, M.
Kärkkäinen, M.
Varonen, M.
Karttaavi, R.
Weber, Rainer  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Seelmann-Eggebert, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Närhi, T.
Halonen, K.
Mainwork
Asia Pacific Microwave Conference 2006  
Conference
Asia Pacific Microwave Conference (APMC) 2006  
DOI
10.1109/APMC.2006.4429402
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • low-noise amplifier (LNA)

  • rauscharmer Verstärker

  • MMIC

  • metamorphic high electron mobility transistor

  • metamorpher Transistor mit hoher Elektronenbeweglichkeit

  • MHEMT

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