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  4. Domain pinning in GaAs/AlGaAs quantum well infrared photodetectors
 
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2006
Journal Article
Title

Domain pinning in GaAs/AlGaAs quantum well infrared photodetectors

Other Title
Felddomänen in GaAs/AlGaAs Quantenfilm-Infrarotdetektoren
Abstract
We have analyzed the spatial distribution of electric field domains induced by negative differential photoconductivity in n-type GaAs/AlGaAs quantum well infrared photodetectors. We find strong evidence of two different domain configurations, with the high-field domain and the low-field domain, respectively, adjacent to the emitter contact. A distinctive signature of these domain configurations is provided by the observed total current, which is observed to be close to either the valley current or the peak current. We also discuss the emergence of the two configurations.
Author(s)
Schneider, H.
Schönbein, C.
Rehm, Robert  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Koidl, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Applied Physics Letters  
DOI
10.1063/1.2171767
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • electric field domain pinning

  • elektrische Felddomäne

  • quantum-well

  • Quantenfilm

  • infrared photodetector

  • Infrarot-Photodetektor

  • negative differential photoconductivity

  • negativ differentielle Leitfähigkeit

  • GaAs/AlGaAs

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