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InP DHBT-based IC technology for high-speed data communications

InP DHBT-basierende IC Technologie für Hochgeschwindigkeits Datenübertragung
: Driad, R.; Schneider, K.; Makon, R.E.; Lang, M.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.

European Microwave Association:
European Microwave Week 2005. CD-ROM : 35th European Microwave Conference 2005. European Conference on Wireless Technologies 2005. European Gallium Arsenide and other Compound Semiconductors Application Symposium. European Radar Conference
London: Horizon House, 2005
ISBN: 2-9600551-0-1
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <13, 2005, Paris>
Conference Paper
Fraunhofer IAF ()
bipolar transistor; double heterostructure; doppelte Heterostruktur; InP; ETDM; 40 Gbit/s; transimpedance amplifier; Transimpedanzverstärker; Multiplexer; Demultiplexer

In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology. High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 µm2 exhibited peak f(ind T) and f(ind MAX) values of 265 and 305 GHz, respectively, at a collector current density of 3.75 mA/µm2. Using this technology, a set of basic analog and digital IC building blocks, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 Gb/s and beyond, have been successfully designed and fabricated.