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Coplanar W-band low noise amplifier MMIC using 100-NM gate-length GaAs PHEMTs

Ein auf pseudomorphen HEMTs, mit 100nm Gatelänge basierender, rauscharmer W-Band Verstärker MMIC
: Bessemoulin, A.; Grunenputt, J.; Fellon, P.; Tessmann, A.; Kohn, E.

GAAS 2004. 12th European Gallium Arsenide & other Compound Semiconductors Application Symposium
London: Horizon House, 2004
ISBN: 1-58053-990-4
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <12, 2004, Amsterdam>
Conference Paper
Fraunhofer IAF ()
pseudomorphic HEMT; pseudomorpher HEMT; PHEMT; W-Band; coplanar waveguide; koplanarer Wellenleiter; low noise; rauscharm; amplifier; Verstärker; MMIC; 100nm

This paper presents the performance of a W-band low noise amplifier MMIC, based on coplanar technology, and utilizing 100-nm gate-length GaAs pseudomorphic power HEMTs. With a chip size of less than 2 mm2, this two-stage LNA achieves a small signal gain of more than 12 dB between 90 and 100 GHz, with 12.5-dB gain and 3.9-dB noise figure at 94 GHz. This is the best reported performance for power PHEMT-based LNAs at W-band, which is also comparable to the best results reported with more advanced InP or Metamorphic HEMT low noise technologies.