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  4. Coplanar W-band low noise amplifier MMIC using 100-NM gate-length GaAs PHEMTs
 
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2004
Conference Paper
Title

Coplanar W-band low noise amplifier MMIC using 100-NM gate-length GaAs PHEMTs

Other Title
Ein auf pseudomorphen HEMTs, mit 100nm Gatelänge basierender, rauscharmer W-Band Verstärker MMIC
Abstract
This paper presents the performance of a W-band low noise amplifier MMIC, based on coplanar technology, and utilizing 100-nm gate-length GaAs pseudomorphic power HEMTs. With a chip size of less than 2 mm2, this two-stage LNA achieves a small signal gain of more than 12 dB between 90 and 100 GHz, with 12.5-dB gain and 3.9-dB noise figure at 94 GHz. This is the best reported performance for power PHEMT-based LNAs at W-band, which is also comparable to the best results reported with more advanced InP or Metamorphic HEMT low noise technologies.
Author(s)
Bessemoulin, A.
Grunenputt, J.
Fellon, P.
Tessmann, Axel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kohn, E.
Mainwork
GAAS 2004. 12th European Gallium Arsenide & other Compound Semiconductors Application Symposium  
Conference
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) 2004  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • pseudomorphic HEMT

  • pseudomorpher HEMT

  • PHEMT

  • W-Band

  • coplanar waveguide

  • koplanarer Wellenleiter

  • low noise

  • rauscharm

  • amplifier

  • Verstärker

  • MMIC

  • 100nm

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