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  4. Atomic layer deposited ZnO:Al for nanostructured silicon heterojunction solar cells
 
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2012
Journal Article
Title

Atomic layer deposited ZnO:Al for nanostructured silicon heterojunction solar cells

Abstract
For transparent front contacts of nanostructured silicon solar cells aluminum doped zinc oxide (ZnO:Al), deposited by atomic layer deposition (ALD), is investigated. For this purpose it is crucial that the ZnO:Al layer covers the nanostructures conformally. ZnO:Al deposition at a temperature of 225°C, compatible with the underlying solar cell structures, yields a resistivity of 1.2×10 -3 cm and 85% mean optical transmittance in the VIS-NIR range (<1300 nm). The complex dielectric function of the ALD-ZnO:Al is determined by fitting optical spectra with a multi-oscillator model. An investigation of the layer structure shows a preferential growth in the c-direction of the hexagonal ZnO crystal and 100-200 nm long wedge-shaped crystallites. I-V measurements on planar ZnO:Al/a-Si:H(n/p)/c-Si(n/p) test structures reveal the nature of the ZnO:Al contact to both n- and p-type a-Si:H. Simple planar solar cells exhibited an excellent rectification behavior and open circuit voltages V OC=620-640 mV. The feasibility of nanostructure silicon heterojunction solar cells is demonstrated by showing the conformal coating of deep Si nanowire structures.
Author(s)
Steglich, M.
Bingel, A.
Jia, G.
Falk, F.
Journal
Solar energy materials and solar cells  
DOI
10.1016/j.solmat.2012.04.004
Language
English
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
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